Archive
Year 2018
№ 4 (251)
V.V. Vasilevskiy. A.S. Zhebel Multispectral processing of video-data for aerospace monitoring of low-observable objects 4-7 A.A. Pugachev The Methods for Photosensitive VLSI resolution simulation considering special factors 8-15 А.М. Zubkov Computer Aided Design (CAD) of the ALGaN/GaN FET X-Band low-noise amplifiers 16-23 A.V. Tsarev Optimization of GaN HEMT power amplifier stages by power characteristics to improve power added efficiency of Transmit-Receive Module 24-29 E.T. Avrasin, D.O. Vanichkin, E.N. Vologdin Method of using the results of semiconductor device`s voltage-breakdown tests to confirm the requirements for the pulsed gamma-radiation resistance 30-36 N.L. Evdokimova, V.V. Dolgov, K.A. Ivanov, A.Yu. Motorin, V.S. Ezhov Transient thermal resistance of semiconductor devices, obtained by heating and cooling methods 37-45 A.A. Osipovskiy, A.V. Perevezentsev, A.A. Revonchenkov, An. V. Redka, M.A. Shishkov 2-channel ATRM for UHF AESA: receiving channel 46-52 E.M. Savchenko, V.A. Sidorov, A.G. Chuprunov, I.A. Bilarus Metal-ceramic TO-254 case for 2200 W 50 A power electronic devices 53-59
№ 3 (250)
Yu. V. Gulyaev, E. I. Goldman, G.V. Chucheva On the stability of ultrathin insulated layers of the silicon oxide to the field damage 6-12 A.N. Aleshin, O.A. Ruban Design of the metamorphic step-graded buffer layer, based on phenomenological description of structural relaxation in epitaxial layers 13-24 I.M. Abolduev, A.A. Dorofeev, K.A. Ivanov, V.M. Minnebaev, An.V. Redka, A.V. Tsarev Investigation of the effect of the Schottky FET active region design on its thermal behavior 25-31 E.M. Savchenko, P.V. Taran, A.V. Telets, S.A. Fursov, A.N. Shchepanov The main approaches to the development of analog and microwave electronic components models for use in CAD 32-43 S.M. Romanovskiy Analysis of negative side-effects arising from the installation of three power LDMOS transistor dies into one case 44-52 A.A. Pugachev, A.A. Kononov The method for technolocal-device modeling of X-ray sensitive charce coupled device VLSI 53-59 A.A. Dorofeev Calculation of the mixing resonant-tunneling diode cutoff frequency for the equivalent circuit with quantum inductance 60-64 V.M. Minnebaev, Al.V. Redka, A.V. Ushakov, M.V. Ushakov, A.V. Tsarev X-band Microwave Waveguide Power Combiner I.M. Abolduev, A.V. Belolipetskiy, V.M. Minnebaev, Al.V. Redka, I.A. Khabarov, A.V. Tsarev Linear Microstrip Radiators for AESA Radar Applications F.I. Shamhalov, E.V. Shirkina, M.N. Kiselev Analysis of the Risks Arising due to Errors in Patent and Legal Support for Research and Development
65-68
69-73
74-81
№ 2 (249)
E.G. Polyakova Device structures based on β-FeSi2 4-18 M.A. Zinoviev, M.V. Mezhennyi, A.S. Drenin, E.S. Rogovskiy, O.V. Khoruzhenko, O.R. Abdullaev Simulation of the photosensitive element based on xBn-structure of InGaAs/AlInAs/InGaAs 19-28 I.E. Ioshin, Yu.A. Kontsevoy Influence of ultraviolet in vitro radiation on artificial eye lenses and the importance of sunglasses quality control 29-33 E.M. Savchenko, S.V. Kataev, V.A. Sidorov, A.G. Chuprunov Thick-film metallization technology for the AlN-ceramics using compounds based on refractory metals 34-39 M. N. Kondakov, S. V. Chernykh, A. V. Chernykh, D. A. Podgorny, N. B. Gladysheva, A. A. Dorofeev, S. I. Didenko, D. B. Kaprov, T. A. Zhukova Effect of annealing conditions on electrical properties, surface morphology and microstructure of Mo/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructures 40-47 A.A. Zolotarev Application of AlSiC metal-matrix composite to produce GaN microwave transistor cases 48-52 M.N. Kiselev, N.S. Nikolaenkov Analysis of the practice of legal protection of innovation results, generated in microelectronics R&D
53-59
№ 1 (248)
V.A. Bespalov, N.A. Dyuzhev, B.K. Medvedev Silicon carbide power electronic devices technology (overview) 4-18 E.N. Vologdin Physical basis for prediction of silicon semiconductor devices resistance to the pulsed neutron radiation 19-27 Radiation hardness estimation and assurance of solid-state microwave electronics by the choice of the criteria parameters 28-34 E. T. Avrasin, D. O. Vanichkin, E. N. Vologdin, I. Ya. Gantman, V. F. Sinkevich Analysis of methodological basis for pulsed voltage-withstand testing of semiconductor electronic devices in accordance with regulatory documentation 35-48 I.A. Kharitonov Simulation of radiation-induced drain leakage currents in SOI MOSFETs at high temperatures with SPICE model 49-56 V.E. Akinin, O.V. Borisov, Yu.V. Kolkovskiy, V.M. Minnebaev, Al.V. Redka, An.V. Redka, A.V. Ushakov, A.V. Tsarev 8-th channel X-band transceiver module with digital signal pre-processing 57-67 D.V. Gasilin Improving of the frequency-selective broadband receiver structure V.V. Vasilevsky, A.N. Mikhоlyonok, A.S. Zhebel High-performance algorithm for preliminary digital processing of video information for aerospace monitoring of dynamic objects
G. V. Chukov, V. V. Elesin, G. N. Nazarova, N. A. Usachev, D. V. Boychenko, A. Yu. Nikiforov, A. V. Telets
68-71
72-77
Year 2017
№ 4 (247)
Kleymenov V. V., Sakhno V. I., Sakhno D. I. Modeling of synthetic aperture radar with composite pseudo-noise waveform formed on the basis of F-codes Download this article as .pdf 4-12 Krymko M. M., Korneev S. V., Romanovskiy S. M. Simulation of intrinsic matching networks` losses of microwave power transistor and estimation of their influence on transistor performance Download this article as .pdf 13-20 Minnebaev S. V., Filatov A. L., Krasnov V. V. Low-noise AlxGa1-xN/GaN composite-channel HEMT Download this article as .pdf 21-27 Sakhno D. I. The ambiguity function of synthetic aperture radar quasicontinuous pseudo-noise waveform Download this article as .pdf 28-36 Kobeleva S. P., Perevezentsev A. V., Fomin V. M., Frenkel M. M. Calculation of active electronically scanned antenna array beam pattern Download this article as .pdf 37-41 Zhebel A. S., Kostyukov E. V., Pugachev A. A., Sokolov S. V. Optimization of vertical anti-blooming device performance in photosensitive charge-coupled device Download this article as .pdf 42-46 Sakhno V. I. Ambiguity function of the composite pseudo-noise waveform formed on the basis of F-codes Download this article as .pdf 47-52 Zinoviev M. A., Drenin A. S., Rogovskiy E. S., Abdullaev O. R., Khoruzhenko O. V. Physico-mathematical modeling of the operation of an avalanche photodiode based on the A3B5 heterostructure Download this article as .pdf 53-60 Ivashko A. I., Krymko M. M. Metal-ceramic case for power semiconductor modules Download this article as .pdf 61-67
№ 3 (246)
Gruzdov V. V., Kolkovsky Yu. V. Radiation-hardened gallium nitride microwave technology Download this article as .pdf 4-9 Kontsevoy Yu. A., Shamkhalov F. I. Material and structural inspection in the design of GaN microwave transistors Download this article as .pdf 10-14 Belolipetskiy A. V., Borisov O. V., Kolkovsky Yu. V., Legai G. V., Minnebaev V. M., Redka Al. V., Redka An. V. Electronic antenna unit for X-band space application AESA Download this article as .pdf 15-25 Savchenko E. M., Budyakov P. S., Surkov N. S. Gain-block based ultra-high-speed ADC drivers Download this article as .pdf 26-33 Benuni I. S., Valamin E. A., Minnebaev V. M., Evgrafov A. Yu., Minnebaev S. V., Zubkov A. M. Extraction of GaN transistor model for large signal operation Download this article as .pdf 34-43 Benuni I. S., Dyakonitsa O. Yu., Klimov A. O., Pavlyuk-Moroz N. A., Redka Al. V. Features of microwave GaN power amplifier dies solder bonding Download this article as .pdf 44-51 Kiselev M. N. Intellectual property management in the process of high-tech microwave electronic products creation Download this article as .pdf 52-58
№ 2 (245)
Gruzdov V. V., Enisherlova K. L., Kolkovskiy Yu. V. Comparative analysis of AlGaN/GaN microwave transistors Download this article as .pdf 6-13 Korneev V. E., Pashkov M. V., Shamkhalov F. I. Features of monitoring GAN microwave transistor's ohmic contact creation technology Download this article as .pdf 14-17 Kuliev M. V. Overview of today's GaN transistors and development trends Download this article as .pdf 18-28 Lozovsky V. N., Lomov A. A., Seredin B. M.,Simakin S. G.,Zaichenko A. N., Seredina M. B. Thermomigration p-channels: real structure and electrical properties Download this article as .pdf 29-38 Zolotarev A. A., Ivanov K. A. Analysis of deformation of metal-matrix composite AlSiC under self-heating microwave power FET with Schottky barrier Download this article as .pdf 39-47 Alipa D. G., Dyakonitsa O. Yu., Klimov A. O. Investigation of the defects in ultrasonic bonding of microwave transistors Download this article as .pdf 48-56
№ 1 (244)
Maksimov A. N., Krasnov A. A., Ivashko A. I., Ledovskikh A. P., Krymko M. M., Korneev S. V., Sinkevich V. F. The impact of the second barrier layer AlGaN on the parameters of the power HEMT Download this article as .pdf 4-12 Perov G. V., Sinitsa A. V. Parameters of extreme electrical stress in ultrathin films of silicon oxide with inomogeneous blocking edge Download this article as .pdf 14-21 Knyazev I. V., Palagin M. S., Kostsov E. G., Gluhov A. V. Design of fast optical switch with dynamically tunable wavelength Download this article as .pdf 23-28 Perov G. V. Determination of the critical configurations of an oxidized polysilicon gate to reduce the probability of failures in stored nonvolatile memory arrays Download this article as .pdf 30-35 Manin A. V., Yudin A. V., Eliseichev E. A. Block-modular switching power supply for high-temperature heater with parasitic inductance control Download this article as .pdf 37-44 Evdokimova N. L., Dolgov V. V., Motorin A. Yu. Thermal conductivity measurements of materials used in manufacturing of semiconductor devices Download this article as .pdf 45-52
Year 2016
№ 4 (243)
Anosov V. S., Gomzikov D. V., Pashkov M. V., Seidman L. A., Tychkin R. I., Fomin V. M. Research of the installation of the power transistors silicon chips in gold-plated and nickel-plated housings with a ПСр 2.5 alloy Download this article as .pdf 4-10 Palagin M. S., Knyazev I. V., Berkin A. B. Modeling and analysis of membranes for micropumps Download this article as .pdf 12-18 Pechenkin A. A., Savchenkov D. V., Kessarinskiy L. N., Tararaksin A. S., Bobrovskiy D. V., Sorokoumov E. S. Localizing the microchip die components, which determine the level of resistance to the pulsed ionizing radiation, using pulsed laser beam Download this article as .pdf 20-27 Potapov A. L., Yashanin I. B., Ulanova A. V. Investigation of the influence of ram memory cell design on the degree of information safety Download this article as .pdf 29-35 Shvetsov-Shilovskiy I. I. Total ionizing dose radiation effects in the elements of 0.24 um CMOS SOI test structures Download this article as .pdf 37-45 Usov S. O., Sakharov A.V., Tsatsulnikov A. F., Zavarin E. E., Nikolaev A. E., Yagovkina M. A., Zemlyakov V. E., Egorkin V. I., Ustinov V. M. High electron mobility transistors based on InAlN/AlN/GaN heterostructures Download this article as .pdf 47-57
№ 3 (242)
Anosov V. S., Gomzikov D. V., Pashkov M. V., Seidman L. A., Tychkin R. I., Fomin V. M. Investigation of silicon die braze bonding method using Au-Si eutectic alloy Download this article as .pdf 4-12 Ivashko A. I., Krymko M. M. The influence of solder materials on the parameters of power semiconductor devices Download this article as .pdf 14-20 Gasilin D. V., Kotelnikov V. G. Algorithm for frequency-selective receiver with ultra-wideband digital signal processing Download this article as .pdf 22-26 Goraychev V. G., Chernokozhin V. V. The influence of properties of multilayered dielectric layers on the radiation sensitivity of MONOS-structures Download this article as .pdf 28-40 Didyk P. I., Basovskiy A. A., Zhukov A. A., Kharitonov V. A. Electrical parameters of planar diodes in wide temperature range Download this article as .pdf 42-48
№ 2 (241)
Kolpakov K. N. Method of calculating the thermal regime of solid-state microwave modules during screening tests Download this article as .pdf 4-8 Metelkin I. O., Elesin V. V. Modeling of transient radiation effects in GaAs field effect transistorse Download this article as .pdf 10-19 Krasnov A. A., Troshchiev S. Yu. Synthetic diamond betavoltaic element design and electrical evaluation Download this article as .pdf 21-31 Babkin S. I., Volkov S. I., Esenkin K. S., Novoselov A. S., Stolyarov A. A. Multilevel metallization for high temperature microelectronics Download this article as .pdf 33-44 Sogoyan A. V., Chumakov A. I. Evaluation of ionization response of semiconductor elements in the diffusion approximation under the influence of heavy charged particles Download this article as .pdf 46-57
№ 1 (240)
Prilutskiy A. A. Excitation of electrically large APAA by the wideband chirp signal Download this article as .pdf 4-18 Ivanov K. A. Single-threaded realization of the multi-grid method with a magic interpolation Download this article as .pdf 19-36 Enisherlova K. L., Kolkovsky Yu. V., Kontsevoy Yu. A., Rusak T. F., Gusev M. E. Influence of ultraviolet illumination on the electrical and optical properties of the AlGaN/GaN heterostructures Download this article as .pdf 37-46 Aronov V. L., Kolchin G. S., Korenkov I. V., Yakovlev I. P. Problems of nonlinear microwave amplifier path adjustment in the frequency band during serial production of transmitting modules Download this article as .pdf 47-52 Kataev S. V., Batrov A. E. Manufacture of power microwave transistor package’ components, power electronics devices and engineering equipment using multifunctional complex LRS-300A Download this article as .pdf 53-57
Year 2015
№ 1 (235)
Gusev M. E. Fast method calibrated electronic shutter for CCD Download this article as .pdf 8-12 Ainbund М. R., Alymov O. V., Andreeva E. B., Vasiliev I. S., Levina E. E., Pashuk A. V., Plakhov S. A., Svischev I. A., Chernova O. V. Hybrid low light level TV device for UV spectral range Download this article as .pdf 13-16 Abolduev I. M., Garber G. Z., Zubkov A. M., Ivanov K. А., Kolkovsky Yu. V., Krasilnikov V. D., Minnebaev V. M. The microwave parameters temperature dependence of the GaN and diamond power FETs Download this article as .pdf 18-25 Evdokimova N. L., Ejov V. S., Ivanov K. A. Analytical thermal structural function. Numerical modeling Download this article as .pdf 27-35 Evdokimova N. L., Ejov V. S. The determination of emissivity and the self heating temperature of semiconductor devices in one measuring process Download this article as .pdf 37-40 Sinkevich V. F., Telets A. V. The dependence of the number of failures from solid-state microwave modules operating time Download this article as .pdf 41-44 Shumkov I. E., Krymko M. M., Korneev S. V., Rostanin A. N., Khristyanovskiy A. G. BICMOS circuit driver’s features for intelligent power modules multiphase invertors Download this article as .pdf 45-53 Babkin S. I., Novoselov A. S., Presnyakov M. Y. The programming element, integrated into the multilevel metallization CMOS SOI Download this article as .pdf 55-61 Kataev S. V., Sidorov V. A., Evstigneev D. A. The heat-removing bases of AlN ceramics with metallized holes in the base circuits for L-band power transistors Download this article as .pdf 62-67
Year 2014
№ 3 (234)
Abolduev I. M., Veits V. V., Evgrafov A. Y., Minnebaev V. M., Soltakhanov S. U., Chernykh A. V. Investigation of GaAs diodes with barrier Shottky for solid state noise source of X band 4-8 Kargin N. I., Volosov A. V., Minnebaev S. V., Blinov P. I. Design and technologies of modern micro-chip modules fabrication and trends for their development 10-14 Garber G. Z. Mathematical modeling as a means to estimate the accuracy of the microwave FET equivalent circuit Download this article as .pdf 15-25 Minnebaev V. M., Krasnov V. V. LNA for multichannel receiver 8-mm range input krioblok for spectral observations 27-33 Chernykh M. I., Veligura G. A., Buslov V. A., Kozhevnikov V. A., Tsotsorin A. N. Thermal stability of multilayer metallization systems for semiconductor device application 35-41 Demenkova T. A., Nikolaev S. A., Pevtsov E. F. Architecture of IP blocks for FFT calculation 42-49 Starykh А. А., Kovalev А. V. The development optimization of asynchronous adders 51-55 Baturin A. V., Loscot A. I. Testing electronic products under the scheme stepwise loading. Use Bayesian estimates of parameters of realibility Download this article as .pdf 56-61 Komkov O. S., Firsov D. D., Kovalishina E. A., Petrov A. S. Optical absorption in epitaxial structures based on InAs at temperatures of 80 K and 300 K 62-64
№ 2 (233)
Borisov O. V., Ivanov K. A., Zubkov A. M., Minnebaev V. M., Redka Al. V. X-band 70-W GaN broadband power amplifier Download this article as .pdf 4-9 Kostyukov E. V., Maklakov A. M., Pugachev A. A., Pospelova M. A., Sokolov S. V., Trunov S. V. The CCD image sensor with vertical over flow drain Download this article as .pdf 10-19 KolkovskyYu. V., Minnebaev V. M. Application of GaN devices in space environment Download this article as .pdf 20-26 Vologdin E. N., Dyukanov P. A., Sinkevich V. F., Smirnov D. S., Surkov G. P. Accounting for the effects of neutron irradiation to bipolar ICS OS when circuit simulation Download this article as .pdf 27-33 Klyuev A. V., Yakimov A. V., Ryzhkin M. I., Luchnikov A. P., Bolkhovskaya O. V. Investigation of 1/f noise in quantum-dimensional heteronanostructures based on GaAs Download this article as .pdf 34-41 Lebedev A. A., Komleva V. A., Yakovleva N. M. Architectural and circuit design techniques improving radiation-sensitive characteristics of the LM124 class operational amplifier used in space equipment Download this article as .pdf 42-46 Babkin S. I., Novoselov A. S. The thin film structure for programming element, integrated into the multilevel metallization CMOS VLSI Download this article as .pdf 47-50 Prokopenko N. N., Dvornikov O. V., Budyakov P. S. Properties, parameters and connection circuits of differential difference amplifiers with high impedance node Download this article as .pdf 51-62 Luchnikov P. A., Rogachev A. A., Yarmolenko M. A., Luchnikov A. P. Segregation of silver nanoparticles in layered metal-polymer heterostructures after heat treatment Download this article as .pdf 63-72
№ 1 (232)
Petrosyants K. O., Samburskiy L. M., Haritonov I. A. Influence of various types radiation on characteristics of the silicon-germanium heterojunction transistors Download this article as .pdf 3-18 Budyakov A. S., Ghuravleva L. V., Vlasov A. I., Averiyanihin A. E. Design of Marchund baluns for millimeter wave monolithic integrated circuits based on silicon technologies Download this article as .pdf 20-28 Zubkov A. M. Study of the possibility of the cubic Curtis model using for the calculation of power microwave AlGaN HFETs amplifiers Download this article as .pdf 29-34 Baturin A. V., Grigorieva T. A., Loscot A. I., Malinin V. G. Use of Bayes theorem for assessment of the electronic component base reliability Download this article as .pdf 35-38 Ivanov K. A. Verification code for calculation of temperature field Download this article as .pdf 40-43 Gladysheva N. B., Zavadsky Yu. I., Kolkovsky Yu. V., Kontsevoy Yu. A. Ellipsometric control of metallization process in microwave transistor technology Download this article as .pdf 44-50 Vasilev V. Yu. The low-temperature gas-phase deposition at sub-atmospheric pressure of silicon dioxide layers by means of tetraetoksisilan oxidation by ozone-oxygen mixture for application in submicron integrated circuits. Part 2. Investigation of layer growth in condition of continuous lapping reagents Download this article as .pdf 52-61 Aleksandrov O. V., Kovtun E. S., Romanov N. M., Semenov A. E. Investigation of corrosion resistance of the IC aluminum metallization Download this article as .pdf 63-68 Lisyanskiy A. N., Kozhevnikov V. A. Manufacturing technology of Shottky gate transistor with a vertical structure Download this article as .pdf 69-74 Kargin N. I., Kuznetsov A. L., Seidman L. A., Chashkin N. A., Shostachenko S. A. Formation of ohmic contacts in the high electron mobility transistor with metamorphic heterojunction based on gallium arsenide Download this article as .pdf 75-84
Year 2013
№ 2 (231)
Orlikovsky A. A., Vyurkov V. V., Rudenko K. V., Semenishin I. A., Svintsov D. A., Miakonkikh A. V., Filippov S. N., Rogozhin A. E. Evolution of MIS-nanotransistor Download this article as .pdf 3-25 Aronov V. L., Romanovsky S. M. Model investigation of effects of the multichanel microwave LDMOS transistor work in frequency band Download this article as .pdf 26-34 Enisherlova K. L, Lutzau A. V., Seidman L. A., Temper E. M., Konovalov A. M. Technological features of the ohmic contact formation in Ti-Al-Ni-Au–n-AlGaN-GaN system Download this article as .pdf 35-45 Fedorets V. N., Kolkovsky Yu. V. Investigations in area of the surface acoustic wave in SRI «Pulsar» Download this article as .pdf 46-52 Aronov V. L., Evstigneev A. S., Evstigneev A. A. Thematic transformation of SRI «Pulsar» for past 60 years Download this article as .pdf 53-58 Podgorny Y. V., Vishnevskiy A. S., Vorotilov K. A., Sigov A. S. Simulation of current-voltage characteristics of thin-film ferroelectric structures with differential negative conductivity Download this article as .pdf 59-68 Krymko M. M., Korneev S. V., Kolchin G. S., Leonidov V. V., Shumkov I. E. Formation of time-current characteristic of the protection and commutation all-solid state apparatus with microintegrated system Download this article as .pdf 70-74 Seregin D. S., Vishnevskiy A. S.,Vorotilov K. A., Lantsev A. N., Valeev A. S. Chemical vapor deposition of low-k insulating layers Download this article as .pdf 75-87 Gruzdov V. V., Kolkovsky Yu. V., Minnebaev V. M. Microwave electronics based on gallium nitride – the main direction of the radioelectronic systems creation Download this article as .pdf 88-101 Nesterov S. A., Borodin D. V., Pugachev A. A. Development of the visible band CMOS photodetector on base of home technology (brief communication) Download this article as .pdf 102-104
№ 1 (230)
Zyablyuk K. N., Kontsevoy Yu. A., Mityagin A. Yu., Talipov N. H., Chucheva G. V. The adamantine field transistor parameters required for work in amplifiers of GHz band Download this article as .pdf 3-8 Garber G. Z., Dorofeev A. A., Zubkov A. M., Ivanov K. A., Kolkovsky Yu. V. Design of the SHF power FET ‘s on diamond base with assistance of computer simulation Download this article as .pdf 9-16 Babkin S. I., Trohin A. S., Novoselov A. S. Deposition process of the amorphous silicon layers integrated in technology of the CMOS LSI multilayer metallization Download this article as .pdf 17-21 Abolduev I. M., Veits V. V., Garber G. Z., Evgrafov A. Yu., Zubkov A. M., Minnebaev V. M., Chernyh A. V. GaAs-diode with Schottky barrier for the solid state noise oscillator of X-band Download this article as .pdf 22-25 Konstantinov P. B., Kostyukov E. V., Scrileov A. S., Chernokozhin V. V. Action of the electron-sensitive CCD-matrix – element of electron-optical converter Download this article as .pdf 26-30 Borisov O. V., Ivanov K. A., Kolkovsky Yu. V., Minnebaev V. M., Redka A. V., Ushakov A. V. Phasestable 200W GaN power amplifer of X-band Download this article as .pdf 31-36 Korneev S. V., Krymko M. M., Maksimov A. N. Possibilities and limitations of TRENCH MOS structures Download this article as .pdf 37-41 Baranochnikov M. L., Mordkovich V. N., Leonov A. V., Pazhin D. M., Pavlyuk M. I., Anufriev V. N., Bogatyrev V. N., Dymov D. V. Noncontact current sensor with increased reliability in extreme conditions Download this article as .pdf 42-51 Vologdin E. N., Gantman I. Ya., Sidorov D. V. Analyze of the radiation defects space distribution at irradiation of silicon by the radioactive source α-particles Download this article as .pdf 52-59 Krymko M. M., Korneev S. V., Rostanin A. N., Hristyanovskiy A. G., Shumkov I. E. Investigation of electrical parameters of the protection and switching solid-state devices Download this article as .pdf 60-68 Evdokimova N. L., Ezhov V. S., Minin V. F. Thermal analyze of semiconductor structures Download this article as .pdf 69-75 Vasilev V. Yu. The low-temperature gas-phase deposition at subatmospheric pressure of silicon dioxide layers by means of tetraetoksisilan oxidation by ozone-oxygen mixture for application in submicron integrated circuits. Part 1. Review of situation, directions and tasks of investigation Download this article as .pdf 76-87 Kurmachev V. A. The Schottky iridium contacts for AlGaN/GaN heterostructures (brief communication) Download this article as .pdf 88-89
1. A.V. Tsarev
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