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E.M. Savchenko, E.S. Drozdenko
Overview of the main stages of the origin and development of radio engineering frequency multipliers (part 1)
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4
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A.A. Davlyatshina, E.S. Kopkova
Analysis and prospects of creation and development of domestic microchips on the example of nuclear industry
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17
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M.E. Gusev
Microwave gan hemt thermal field monitoring
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24
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P.S. Gromova, A.S. Tararaksin, A.S. Kolosova, D.V. Boychenko, V.N. Vyuginov, V.V. Luchinin
Sustainability area of 4h-sic shottky diodes under the impact of heavy ions
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30
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K.N. Kolpakov
Using the criterial equations for the description of heat transfer in heat chamber for microwave power modules testing
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39
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A.A. Zolotarev, An.V. Redka
Research of the thermal coefficient of linear expansion of metal-matrix composite based on aluminium and silicon carbide
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48
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A. O. Klimov, K. A. Ivanov
Mount technique of GaN power microwave transistors
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57
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N.A. Pavlyuk-Moroz
Semiconductor die thermal field calculation with different void configurations in the soldering area
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68
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Year 2018
№ 4 (251)
Read more about issue 4 (251)
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V.V. Vasilevskiy. A.S. Zhebel
Multispectral processing of video-data for aerospace monitoring of low-observable objects
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4-7
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A.A. Pugachev
The Methods for Photosensitive VLSI resolution simulation considering special factors
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8-15
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А.М. Zubkov
Computer Aided Design (CAD) of the ALGaN/GaN FET X-Band low-noise amplifiers
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16-23
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A.V. Tsarev
Optimization of GaN HEMT power amplifier stages by power characteristics to improve power added efficiency of Transmit-Receive Module
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24-29
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E.T. Avrasin, D.O. Vanichkin, E.N. Vologdin
Method of using the results of semiconductor device`s voltage-breakdown tests to confirm the requirements for the pulsed gamma-radiation resistance
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30-36
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N.L. Evdokimova, V.V. Dolgov, K.A. Ivanov, A.Yu. Motorin, V.S. Ezhov
Transient thermal resistance of semiconductor devices, obtained by heating and cooling methods
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37-45
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A.A. Osipovskiy, A.V. Perevezentsev, A.A. Revonchenkov, An. V. Redka, M.A. Shishkov
2-channel ATRM for UHF AESA: receiving channel
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46-52
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E.M. Savchenko, V.A. Sidorov, A.G. Chuprunov, I.A. Bilarus
Metal-ceramic TO-254 case for 2200 W 50 A power electronic devices
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53-59
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№ 3 (250)
Read more about issue 3 (250)
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Yu. V. Gulyaev, E. I. Goldman, G.V. Chucheva
On the stability of ultrathin insulated layers of the silicon oxide to the field damage
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6-12
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A.N. Aleshin, O.A. Ruban
Design of the metamorphic step-graded buffer layer, based on phenomenological description of structural relaxation in epitaxial layers
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13-24
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I.M. Abolduev, A.A. Dorofeev, K.A. Ivanov, V.M. Minnebaev, An.V. Redka, A.V. Tsarev
Investigation of the effect of the Schottky FET active region design on its thermal behavior
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25-31
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E.M. Savchenko, P.V. Taran, A.V. Telets, S.A. Fursov, A.N. Shchepanov
The main approaches to the development of analog and microwave electronic components models for use in CAD
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32-43
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S.M. Romanovskiy
Analysis of negative side-effects arising from the installation of three power LDMOS transistor dies into one case
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44-52
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A.A. Pugachev, A.A. Kononov
The method for technolocal-device modeling of X-ray sensitive charce coupled device VLSI
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53-59
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A.A. Dorofeev
Calculation of the mixing resonant-tunneling diode cutoff frequency for the equivalent circuit with quantum inductance
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60-64
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V.M. Minnebaev, Al.V. Redka, A.V. Ushakov, M.V. Ushakov, A.V. Tsarev
X-band Microwave Waveguide Power Combiner
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65-68 |
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I.M. Abolduev, A.V. Belolipetskiy, V.M. Minnebaev, Al.V. Redka, I.A. Khabarov, A.V. Tsarev
Linear Microstrip Radiators for AESA Radar Applications
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69-73 |
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F.I. Shamhalov, E.V. Shirkina, M.N. Kiselev
Analysis of the Risks Arising due to Errors in Patent and Legal Support for Research and Development
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74-81 |
№ 2 (249)
Read more about issue 2 (249)
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E.G. Polyakova
Device structures based on β-FeSi2
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4-18
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M.A. Zinoviev, M.V. Mezhennyi, A.S. Drenin, E.S. Rogovskiy, O.V. Khoruzhenko, O.R. Abdullaev
Simulation of the photosensitive element based on xBn-structure of InGaAs/AlInAs/InGaAs
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19-28
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I.E. Ioshin, Yu.A. Kontsevoy
Influence of ultraviolet in vitro radiation on artificial eye lenses and the importance of sunglasses quality control
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29-33
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E.M. Savchenko, S.V. Kataev, V.A. Sidorov, A.G. Chuprunov
Thick-film metallization technology for the AlN-ceramics using compounds based on refractory metals
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34-39
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M. N. Kondakov, S. V. Chernykh, A. V. Chernykh, D. A. Podgorny, N. B. Gladysheva, A. A. Dorofeev, S. I. Didenko, D. B. Kaprov, T. A. Zhukova
Effect of annealing conditions on electrical properties, surface morphology and microstructure of Mo/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructures
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40-47
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A.A. Zolotarev
Application of AlSiC metal-matrix composite to produce GaN microwave transistor cases
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48-52
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M.N. Kiselev, N.S. Nikolaenkov
Analysis of the practice of legal protection of innovation results, generated in microelectronics R&D
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53-59 |
№ 1 (248)
Read more about issue 1 (248)
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V.A. Bespalov, N.A. Dyuzhev, B.K. Medvedev
Silicon carbide power electronic devices technology (overview)
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4-18
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E.N. Vologdin
Physical basis for prediction of silicon semiconductor devices resistance to the pulsed neutron radiation
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19-27
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G. V. Chukov, V. V. Elesin, G. N. Nazarova, N. A. Usachev, D. V. Boychenko, A. Yu. Nikiforov, A. V. Telets
Radiation hardness estimation and assurance of solid-state microwave electronics by the choice of the criteria parameters
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28-34
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E. T. Avrasin, D. O. Vanichkin, E. N. Vologdin, I. Ya. Gantman, V. F. Sinkevich
Analysis of methodological basis for pulsed voltage-withstand testing of semiconductor electronic devices in accordance with regulatory documentation
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35-48
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I.A. Kharitonov
Simulation of radiation-induced drain leakage currents in SOI MOSFETs at high temperatures with SPICE model
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49-56
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V.E. Akinin, O.V. Borisov, Yu.V. Kolkovskiy, V.M. Minnebaev, Al.V. Redka, An.V. Redka, A.V. Ushakov, A.V. Tsarev
8-th channel X-band transceiver module with digital signal pre-processing
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57-67
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D.V. Gasilin
Improving of the frequency-selective broadband receiver structure
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68-71 |
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V.V. Vasilevsky, A.N. Mikhоlyonok, A.S. Zhebel
High-performance algorithm for preliminary digital processing of video information for aerospace monitoring of dynamic objects
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72-77 |
Year 2017
№ 4 (247)
Read more about issue 4 (247)
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Kleymenov V. V., Sakhno V. I., Sakhno D. I.
Modeling of synthetic aperture radar with composite pseudo-noise waveform formed on the basis of F-codes
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4-12
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Krymko M. M., Korneev S. V., Romanovskiy S. M.
Simulation of intrinsic matching networks` losses of microwave power transistor and estimation of their influence on transistor performance
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13-20
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Minnebaev S. V., Filatov A. L., Krasnov V. V.
Low-noise AlxGa1-xN/GaN composite-channel HEMT
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21-27
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Sakhno D. I.
The ambiguity function of synthetic aperture radar quasicontinuous pseudo-noise waveform
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28-36
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Kobeleva S. P., Perevezentsev A. V., Fomin V. M., Frenkel M. M.
Calculation of active electronically scanned antenna array beam pattern
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37-41
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Zhebel A. S., Kostyukov E. V., Pugachev A. A., Sokolov S. V.
Optimization of vertical anti-blooming device performance in photosensitive charge-coupled device
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42-46
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Sakhno V. I.
Ambiguity function of the composite pseudo-noise waveform formed on the basis of F-codes
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47-52
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Zinoviev M. A., Drenin A. S., Rogovskiy E. S., Abdullaev O. R., Khoruzhenko O. V.
Physico-mathematical modeling of the operation of an avalanche photodiode based on the A3B5 heterostructure
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53-60
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Ivashko A. I., Krymko M. M.
Metal-ceramic case for power semiconductor modules
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61-67
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№ 3 (246)
Read more about issue 3 (246)
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Gruzdov V. V., Kolkovsky Yu. V.
Radiation-hardened gallium nitride microwave technology
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4-9
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Kontsevoy Yu. A., Shamkhalov F. I.
Material and structural inspection in the design of GaN microwave transistors
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10-14
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Belolipetskiy A. V., Borisov O. V., Kolkovsky Yu. V., Legai G. V., Minnebaev V. M., Redka Al. V., Redka An. V.
Electronic antenna unit for X-band space application AESA
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15-25
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Savchenko E. M., Budyakov P. S., Surkov N. S.
Gain-block based ultra-high-speed ADC drivers
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26-33
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Benuni I. S., Valamin E. A., Minnebaev V. M., Evgrafov A. Yu., Minnebaev S. V., Zubkov A. M.
Extraction of GaN transistor model for large signal operation
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34-43
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Benuni I. S., Dyakonitsa O. Yu., Klimov A. O., Pavlyuk-Moroz N. A., Redka Al. V.
Features of microwave GaN power amplifier dies solder bonding
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44-51
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Kiselev M. N.
Intellectual property management in the process of high-tech microwave electronic products creation
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52-58
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№ 2 (245)
Read more about issue 2 (245)
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Gruzdov V. V., Enisherlova K. L., Kolkovskiy Yu. V.
Comparative analysis of AlGaN/GaN microwave transistors
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6-13
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Korneev V. E., Pashkov M. V., Shamkhalov F. I.
Features of monitoring GAN microwave transistor's ohmic contact creation technology
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14-17
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Kuliev M. V.
Overview of today's GaN transistors and development trends
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18-28
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Lozovsky V. N., Lomov A. A., Seredin B. M.,Simakin S. G.,Zaichenko A. N., Seredina M. B.
Thermomigration p-channels: real structure and electrical properties
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29-38
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Zolotarev A. A., Ivanov K. A.
Analysis of deformation of metal-matrix composite AlSiC under self-heating microwave power FET with Schottky barrier
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39-47
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Alipa D. G., Dyakonitsa O. Yu., Klimov A. O.
Investigation of the defects in ultrasonic bonding of microwave transistors
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48-56
|
№ 1 (244)
Read more about issue 1 (244)
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Maksimov A. N., Krasnov A. A., Ivashko A. I., Ledovskikh A. P., Krymko M. M., Korneev S. V., Sinkevich V. F.
The impact of the second barrier layer AlGaN on the parameters of the power HEMT
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4-12
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Perov G. V., Sinitsa A. V.
Parameters of extreme electrical stress in ultrathin films of silicon oxide with inomogeneous blocking edge
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14-21
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Knyazev I. V., Palagin M. S., Kostsov E. G., Gluhov A. V.
Design of fast optical switch with dynamically tunable wavelength
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23-28
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Perov G. V.
Determination of the critical configurations of an oxidized polysilicon gate to reduce the probability of failures in stored nonvolatile memory arrays
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30-35
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Manin A. V., Yudin A. V., Eliseichev E. A.
Block-modular switching power supply for high-temperature heater with parasitic inductance control
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37-44
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Evdokimova N. L., Dolgov V. V., Motorin A. Yu.
Thermal conductivity measurements of materials used in manufacturing of semiconductor devices
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45-52
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Year 2016
№ 4 (243)
Read more about issue 4 (243)
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Anosov V. S., Gomzikov D. V., Pashkov M. V., Seidman L. A., Tychkin R. I., Fomin V. M.
Research of the installation of the power transistors silicon chips in gold-plated and nickel-plated housings with a ПСр 2.5 alloy
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4-10
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Palagin M. S., Knyazev I. V., Berkin A. B.
Modeling and analysis of membranes for micropumps
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12-18
|
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Pechenkin A. A., Savchenkov D. V., Kessarinskiy L. N., Tararaksin A. S., Bobrovskiy D. V., Sorokoumov E. S.
Localizing the microchip die components, which determine the level of resistance to the pulsed ionizing radiation, using pulsed laser beam
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20-27
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Potapov A. L., Yashanin I. B., Ulanova A. V.
Investigation of the influence of ram memory cell design on the degree of information safety
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29-35
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Shvetsov-Shilovskiy I. I.
Total ionizing dose radiation effects in the elements of 0.24 um CMOS SOI test structures
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37-45
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Usov S. O., Sakharov A.V., Tsatsulnikov A. F., Zavarin E. E., Nikolaev A. E., Yagovkina M. A., Zemlyakov V. E., Egorkin V. I., Ustinov V. M.
High electron mobility transistors based on InAlN/AlN/GaN heterostructures
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47-57
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№ 3 (242)
Read more about issue 3 (242)
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Anosov V. S., Gomzikov D. V., Pashkov M. V., Seidman L. A., Tychkin R. I., Fomin V. M.
Investigation of silicon die braze bonding method using Au-Si eutectic alloy
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4-12
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Ivashko A. I., Krymko M. M.
The influence of solder materials on the parameters of power semiconductor devices
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14-20
|
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Gasilin D. V., Kotelnikov V. G.
Algorithm for frequency-selective receiver with ultra-wideband digital signal processing
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22-26
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Goraychev V. G., Chernokozhin V. V.
The influence of properties of multilayered dielectric layers on the radiation sensitivity of MONOS-structures
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28-40
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Didyk P. I., Basovskiy A. A., Zhukov A. A., Kharitonov V. A.
Electrical parameters of planar diodes in wide temperature range
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42-48
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№ 2 (241)
Read more about issue 2 (241)
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Kolpakov K. N.
Method of calculating the thermal regime of solid-state microwave modules during screening tests
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4-8
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Metelkin I. O., Elesin V. V.
Modeling of transient radiation effects in GaAs field effect transistorse
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10-19
|
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Krasnov A. A., Troshchiev S. Yu.
Synthetic diamond betavoltaic element design and electrical evaluation
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21-31
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Babkin S. I., Volkov S. I., Esenkin K. S., Novoselov A. S., Stolyarov A. A.
Multilevel metallization for high temperature microelectronics
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33-44
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Sogoyan A. V., Chumakov A. I.
Evaluation of ionization response of semiconductor elements in the diffusion approximation under the influence of heavy charged particles
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46-57
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№ 1 (240)
Read more about issue 1 (240)
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Prilutskiy A. A.
Excitation of electrically large APAA by the wideband chirp signal
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4-18
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Ivanov K. A.
Single-threaded realization of the multi-grid method with a magic interpolation
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19-36
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Enisherlova K. L., Kolkovsky Yu. V., Kontsevoy Yu. A., Rusak T. F., Gusev M. E.
Influence of ultraviolet illumination on the electrical and optical properties of the AlGaN/GaN heterostructures
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37-46
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Aronov V. L., Kolchin G. S., Korenkov I. V., Yakovlev I. P.
Problems of nonlinear microwave amplifier path adjustment in the frequency band during serial production of transmitting modules
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47-52
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Kataev S. V., Batrov A. E.
Manufacture of power microwave transistor package’ components, power electronics devices and engineering equipment using multifunctional complex LRS-300A
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53-57
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Year 2015
№ 1 (235)
Read more about issue 1 (235)
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Gusev M. E.
Fast method calibrated electronic shutter for CCD
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8-12
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Ainbund М. R., Alymov O. V., Andreeva E. B., Vasiliev I. S., Levina E. E., Pashuk A. V., Plakhov S. A., Svischev I. A., Chernova O. V.
Hybrid low light level TV device for UV spectral range
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13-16
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Abolduev I. M., Garber G. Z., Zubkov A. M., Ivanov K. А., Kolkovsky Yu. V., Krasilnikov V. D., Minnebaev V. M.
The microwave parameters temperature dependence of the GaN and diamond power FETs
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18-25
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Evdokimova N. L., Ejov V. S., Ivanov K. A.
Analytical thermal structural function. Numerical modeling
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27-35
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Evdokimova N. L., Ejov V. S.
The determination of emissivity and the self heating temperature of semiconductor devices in one measuring process
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37-40
|
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Sinkevich V. F., Telets A. V.
The dependence of the number of failures from solid-state microwave modules operating time
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41-44
|
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Shumkov I. E., Krymko M. M., Korneev S. V., Rostanin A. N., Khristyanovskiy A. G.
BICMOS circuit driver’s features for intelligent power modules multiphase invertors
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45-53
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Babkin S. I., Novoselov A. S., Presnyakov M. Y.
The programming element, integrated into the multilevel metallization CMOS SOI
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55-61
|
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Kataev S. V., Sidorov V. A., Evstigneev D. A.
The heat-removing bases of AlN ceramics with metallized holes in the base circuits for L-band power transistors
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62-67
|
Year 2014
№ 3 (234)
Read more about issue 3 (234)
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Abolduev I. M., Veits V. V., Evgrafov A. Y., Minnebaev V. M., Soltakhanov S. U., Chernykh A. V.
Investigation of GaAs diodes with barrier Shottky for solid state noise source of X band
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|
4-8
|
|
Kargin N. I., Volosov A. V., Minnebaev S. V., Blinov P. I.
Design and technologies of modern micro-chip modules fabrication and trends for their development
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10-14
|
|
Garber G. Z.
Mathematical modeling as a means to estimate the accuracy of the microwave FET equivalent circuit
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15-25
|
|
Minnebaev V. M., Krasnov V. V.
LNA for multichannel receiver 8-mm range input krioblok for spectral observations
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27-33
|
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Chernykh M. I., Veligura G. A., Buslov V. A., Kozhevnikov V. A., Tsotsorin A. N.
Thermal stability of multilayer metallization systems for semiconductor device application
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35-41
|
|
Demenkova T. A., Nikolaev S. A., Pevtsov E. F.
Architecture of IP blocks for FFT calculation
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42-49
|
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Starykh А. А., Kovalev А. V.
The development optimization of asynchronous adders
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51-55
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Baturin A. V., Loscot A. I.
Testing electronic products under the scheme stepwise loading. Use Bayesian estimates of parameters of realibility
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56-61
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Komkov O. S., Firsov D. D., Kovalishina E. A., Petrov A. S.
Optical absorption in epitaxial structures based on InAs at temperatures of 80 K and 300 K
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62-64
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№ 2 (233)
Read more about issue 2 (233)
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Borisov O. V., Ivanov K. A., Zubkov A. M., Minnebaev V. M., Redka Al. V.
X-band 70-W GaN broadband power amplifier
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|
4-9
|
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Kostyukov E. V., Maklakov A. M., Pugachev A. A., Pospelova M. A., Sokolov S. V., Trunov S. V.
The CCD image sensor with vertical over flow drain
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10-19
|
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KolkovskyYu. V., Minnebaev V. M.
Application of GaN devices in space environment
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20-26
|
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Vologdin E. N., Dyukanov P. A., Sinkevich V. F., Smirnov D. S., Surkov G. P.
Accounting for the effects of neutron irradiation to bipolar ICS OS when circuit simulation
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27-33
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Klyuev A. V., Yakimov A. V., Ryzhkin M. I., Luchnikov A. P., Bolkhovskaya O. V.
Investigation of 1/f noise in quantum-dimensional heteronanostructures based on GaAs
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34-41
|
|
Lebedev A. A., Komleva V. A., Yakovleva N. M.
Architectural and circuit design techniques improving radiation-sensitive characteristics of the LM124 class operational amplifier used in space equipment
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42-46
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|
Babkin S. I., Novoselov A. S.
The thin film structure for programming element, integrated into the multilevel metallization CMOS VLSI
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47-50
|
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Prokopenko N. N., Dvornikov O. V., Budyakov P. S.
Properties, parameters and connection circuits of differential difference amplifiers with high impedance node
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51-62
|
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Luchnikov P. A., Rogachev A. A., Yarmolenko M. A., Luchnikov A. P.
Segregation of silver nanoparticles in layered metal-polymer heterostructures after heat treatment
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63-72
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№ 1 (232)
Read more about issue 1 (232)
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Petrosyants K. O., Samburskiy L. M., Haritonov I. A.
Influence of various types radiation on characteristics of the silicon-germanium heterojunction transistors
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3-18
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Budyakov A. S., Ghuravleva L. V., Vlasov A. I., Averiyanihin A. E.
Design of Marchund baluns for millimeter wave monolithic integrated circuits based on silicon technologies
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20-28
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Zubkov A. M.
Study of the possibility of the cubic Curtis model using for the calculation of power microwave AlGaN HFETs amplifiers
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29-34
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Baturin A. V., Grigorieva T. A., Loscot A. I., Malinin V. G.
Use of Bayes theorem for assessment of the electronic component base reliability
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35-38
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Ivanov K. A.
Verification code for calculation of temperature field
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40-43
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Gladysheva N. B., Zavadsky Yu. I., Kolkovsky Yu. V., Kontsevoy Yu. A.
Ellipsometric control of metallization process in microwave transistor technology
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44-50
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Vasilev V. Yu.
The low-temperature gas-phase deposition at sub-atmospheric pressure of silicon dioxide layers by means of tetraetoksisilan oxidation by ozone-oxygen mixture for application in submicron integrated circuits. Part 2. Investigation of layer growth in condition of continuous lapping reagents
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52-61
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Aleksandrov O. V., Kovtun E. S., Romanov N. M., Semenov A. E.
Investigation of corrosion resistance of the IC aluminum metallization
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63-68
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Lisyanskiy A. N., Kozhevnikov V. A.
Manufacturing technology of Shottky gate transistor with a vertical structure
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69-74
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Kargin N. I., Kuznetsov A. L., Seidman L. A., Chashkin N. A., Shostachenko S. A.
Formation of ohmic contacts in the high electron mobility transistor with metamorphic heterojunction based on gallium arsenide
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75-84
|
Year 2013
№ 2 (231)
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Orlikovsky A. A., Vyurkov V. V., Rudenko K. V., Semenishin I. A., Svintsov D. A., Miakonkikh A. V., Filippov S. N., Rogozhin A. E.
Evolution of MIS-nanotransistor
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3-25
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Aronov V. L., Romanovsky S. M.
Model investigation of effects of the multichanel microwave LDMOS transistor work in frequency band
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26-34
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Enisherlova K. L, Lutzau A. V., Seidman L. A., Temper E. M., Konovalov A. M.
Technological features of the ohmic contact formation in Ti-Al-Ni-Au–n-AlGaN-GaN system
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35-45
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Fedorets V. N., Kolkovsky Yu. V.
Investigations in area of the surface acoustic wave in SRI «Pulsar»
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46-52
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Aronov V. L., Evstigneev A. S., Evstigneev A. A.
Thematic transformation of SRI «Pulsar» for past 60 years
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53-58
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Podgorny Y. V., Vishnevskiy A. S., Vorotilov K. A., Sigov A. S.
Simulation of current-voltage characteristics of thin-film ferroelectric structures with differential negative conductivity
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59-68
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Krymko M. M., Korneev S. V., Kolchin G. S., Leonidov V. V., Shumkov I. E.
Formation of time-current characteristic of the protection and commutation all-solid state apparatus with microintegrated system
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70-74
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Seregin D. S., Vishnevskiy A. S.,Vorotilov K. A., Lantsev A. N., Valeev A. S.
Chemical vapor deposition of low-k insulating layers
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75-87
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Gruzdov V. V., Kolkovsky Yu. V., Minnebaev V. M.
Microwave electronics based on gallium nitride – the main direction of the radioelectronic systems creation
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88-101
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Nesterov S. A., Borodin D. V., Pugachev A. A.
Development of the visible band CMOS photodetector on base of home technology (brief communication)
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102-104
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№ 1 (230)
Read more about issue 1 (230)
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Zyablyuk K. N., Kontsevoy Yu. A., Mityagin A. Yu., Talipov N. H., Chucheva G. V.
The adamantine field transistor parameters required for work in amplifiers of GHz band
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3-8
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Garber G. Z., Dorofeev A. A., Zubkov A. M., Ivanov K. A., Kolkovsky Yu. V.
Design of the SHF power FET ‘s on diamond base with assistance of computer simulation
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9-16
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Babkin S. I., Trohin A. S., Novoselov A. S.
Deposition process of the amorphous silicon layers integrated in technology of the CMOS LSI multilayer metallization
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17-21
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Abolduev I. M., Veits V. V., Garber G. Z., Evgrafov A. Yu., Zubkov A. M., Minnebaev V. M., Chernyh A. V.
GaAs-diode with Schottky barrier for the solid state noise oscillator of X-band
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22-25
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Konstantinov P. B., Kostyukov E. V., Scrileov A. S., Chernokozhin V. V.
Action of the electron-sensitive CCD-matrix – element of electron-optical converter
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26-30
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Borisov O. V., Ivanov K. A., Kolkovsky Yu. V., Minnebaev V. M., Redka A. V., Ushakov A. V.
Phasestable 200W GaN power amplifer of X-band
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31-36
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Korneev S. V., Krymko M. M., Maksimov A. N.
Possibilities and limitations of TRENCH MOS structures
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37-41
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Baranochnikov M. L., Mordkovich V. N., Leonov A. V., Pazhin D. M., Pavlyuk M. I., Anufriev V. N., Bogatyrev V. N.,
Dymov D. V.
Noncontact current sensor with increased reliability in extreme conditions
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42-51
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Vologdin E. N., Gantman I. Ya., Sidorov D. V.
Analyze of the radiation defects space distribution at irradiation of silicon by the radioactive source α-particles
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52-59
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Krymko M. M., Korneev S. V., Rostanin A. N., Hristyanovskiy A. G., Shumkov I. E.
Investigation of electrical parameters of the protection and switching solid-state devices
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60-68
|
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Evdokimova N. L., Ezhov V. S., Minin V. F.
Thermal analyze of semiconductor structures
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|
69-75
|
|
Vasilev V. Yu.
The low-temperature gas-phase deposition at subatmospheric pressure of silicon dioxide layers by means of tetraetoksisilan oxidation by ozone-oxygen mixture for application in submicron integrated circuits. Part 1. Review of situation, directions and tasks of investigation
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76-87
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Kurmachev V. A.
The Schottky iridium contacts for AlGaN/GaN heterostructures (brief communication)
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88-89
|
1. A.V. Tsarev
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