Archive

Archive

Year 2019

№ 4 (255)

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*Aronov V.L., Romanovskiy S.M., Bychkov S.S., Korneev S.V., Krymko M.M.* Capabilities of LDMOS transistors designed for pulsed S-band high-power applications in quasilinear operating mode Download this article as .pdf	4
*Brashevan Yu.V., Zavadskiy Yu.I., Konstantinov P.B., Skrylev A.S., Chernokozhin V.V., Alkov P.S., Balyasniy L.M., Gordienko Yu.N., Gruzevich Yu.K., Chistov O.V.* Ultraviolet hybrid photoactive module with GaN photocathode Download this article as .pdf	10
*Kabalnov Yu.A.* Development of the fabrication method for static RAM radiation hardened silicon-on-sapphire microcircuits Download this article as .pdf	16
*Pobedinsky V.V., Rogozin N.V., Bormontov E.N.* Platinum metallization in semiconductor dies contact pads redistribution system for the «flip-chip» die packaging technology Download this article as .pdf	27
*Kontsevoy Yu.A., Korneev V.I., Medvedev B.K.* Inspection of pores and conductive regions in dielectric films Download this article as .pdf	35
*Savchenko E.M., Chuprunov A.G., Sidorov V.A., Bilarus I.A.* Aluminitride ceramics in back planes of power electronic devices Download this article as .pdf	43
*Zolotarev A.A., Chumakova L.V.* Features of metallization of semiconductor device packages made of AlSiC metal-matrix composite Download this article as .pdf	55
*Sonevitskiy A.S., Zhukov V.S.* Methods of sealing the packages of large-sized microwave modules Download this article as .pdf	65
*Shamkhalov F.I., Nikolaenkov N.S.* Import substitution trends in high-tech industries of Russian economy Download this article as .pdf	73

№ 3 (254)

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*V.V. Vasilevsky, A.S. Zhebel* Aerospace monitoring of surface objects based on deterministic-probabilistic image model Download this article as .pdf	4
*Yu.V. Brashevan, M.E. Gusev, Yu.I. Zavadskiy, P.B. konstantinov, A.S. Skrylev, V.V. Chernokozhin* Hybrid photoactive module if visible and ultraviolet range for surveillance and monitoring of the power line coronal discharge Download this article as .pdf	12
*B.V. Emelyanov* Research on amplitude-phase stability of microwave pulsed bipolar transistors of radar output amplifier stages Download this article as .pdf	19
*A.A. Siryaev, V.M. Vorotyntsev, E.L. Shobolov* Applivation of Poole-Frenkel effect and charge carrier injection for defectiveness research of thermal silicon dioxide Download this article as .pdf	29
*Yu.A. Kabalnov, A.N. Trufanov, S.V. Obolensky* Features of the technology of radiation-resistant photodiodes based on silicon-on-sapphire Download this article as .pdf	38
*V.V. Odinokov, V.V. Panin* The modular principle of vacuum-plasma equipment design for plasma etching systems for microelectronics Download this article as .pdf	48
*V.V. Maslov* System principles of management organization in microelectronics service Download this article as .pdf	57

№ 2 (253)

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*K.L. Enisherlova, Yu.V. Kolkovskiy, B.K. Medvedev, A.L. Filatov, E.M. Temper, S.A. Kapilin* Analysis of the influence of a number of design and technological factors on the parameters of power AlGaN/GaN/SiC HEMT Download this article as .pdf	4
*V.L. Aronov, A.S. Evstigneev, G.S. Kolchin, I.P. Iakovlev* The issue of energy storage capacitors in pulse microwave transistor amplifiers Download this article as .pdf	30
*N.L. Evdokimova, V.V. Dolgov, V.S. Ezhov, A.Yu. Motorin, I.M. Abolduev, Yu.A. Kontsevoy* Comparison of electrical and IR-optical methods of temperature measurement of AlGaN/GaN HEMT Download this article as .pdf	41
*E.M. Savchenko, A.D. Pershin, L.A. Seidman, D.G. Drozdov, B.L. Guskov* Effect of plasmochemical,chemical and thermal exposure on the ellipsometric parameters of surface layers of GaAs heterostructures Download this article as .pdf	53
*A. O. Klimov* Thermomechanical response study of the fet crystal changing its vertical orientation in solder Download this article as .pdf	64
*Yu.V. Brashevan, V.G. Goryachev, P.B. Konstantinov, A.S. Skrylev, V.V. Chernokozhin* Study of the effect of electronic ionizing radiation on the properties of photosensitive charge-coupled device matrices Download this article as .pdf	72
*V.V. Maslov* Hierarchy of system-generating organizational structures in special microelectronics Download this article as .pdf	80

№ 1 (252)

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*E.M. Savchenko, E.S. Drozdenko* Overview of the main stages of the origin and development of radio engineering frequency multipliers (part 1) Скачать статью в формате .pdf	4
*A.A. Davlyatshina, E.S. Kopkova* Analysis and prospects of creation and development of domestic microchips on the example of nuclear industry Скачать статью в формате .pdf	17
*M.E. Gusev* Microwave gan hemt thermal field monitoring Скачать статью в формате .pdf	24
*P.S. Gromova, A.S. Tararaksin, A.S. Kolosova, D.V. Boychenko, V.N. Vyuginov, V.V. Luchinin* Sustainability area of 4h-sic shottky diodes under the impact of heavy ions Скачать статью в формате .pdf	30
*K.N. Kolpakov* Using the criterial equations for the description of heat transfer in heat chamber for microwave power modules testing Скачать статью в формате .pdf	39
*A.A. Zolotarev, An.V. Redka* Research of the thermal coefficient of linear expansion of metal-matrix composite based on aluminium and silicon carbide Скачать статью в формате .pdf	48
*A. O. Klimov, K. A. Ivanov* Mount technique of GaN power microwave transistors Скачать статью в формате .pdf	57
*N.A. Pavlyuk-Moroz* Semiconductor die thermal field calculation with different void configurations in the soldering area Скачать статью в формате .pdf	68

Year 2018

№ 4 (251)

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*V.V. Vasilevskiy. A.S. Zhebel* Multispectral processing of video-data for aerospace monitoring of low-observable objects Download this article as .pdf	4-7
*A.A. Pugachev* The Methods for Photosensitive VLSI resolution simulation considering special factors Download this article as .pdf	8-15
*А.М. Zubkov* Computer Aided Design (CAD) of the ALGaN/GaN FET X-Band low-noise amplifiers Download this article as .pdf	16-23
*A.V. Tsarev* Optimization of GaN HEMT power amplifier stages by power characteristics to improve power added efficiency of Transmit-Receive Module Download this article as .pdf	24-29
*E.T. Avrasin, D.O. Vanichkin, E.N. Vologdin* Method of using the results of semiconductor device`s voltage-breakdown tests to confirm the requirements for the pulsed gamma-radiation resistance Download this article as .pdf	30-36
*N.L. Evdokimova, V.V. Dolgov, K.A. Ivanov, A.Yu. Motorin, V.S. Ezhov* Transient thermal resistance of semiconductor devices, obtained by heating and cooling methods Download this article as .pdf	37-45
A.A. Osipovskiy, A.V. Perevezentsev, A.A. Revonchenkov, An. V. Redka, M.A. Shishkov 2-channel ATRM for UHF AESA: receiving channel Download this article as .pdf	46-52
*E.M. Savchenko, V.A. Sidorov, A.G. Chuprunov, I.A. Bilarus* Metal-ceramic TO-254 case for 2200 W 50 A power electronic devices Download this article as .pdf	53-59

№ 3 (250)

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*Yu. V. Gulyaev, E. I. Goldman, G.V. Chucheva* On the stability of ultrathin insulated layers of the silicon oxide to the field damage Download this article as .pdf	6-12
*A.N. Aleshin, O.A. Ruban* Design of the metamorphic step-graded buffer layer, based on phenomenological description of structural relaxation in epitaxial layers Download this article as .pdf	13-24
*I.M. Abolduev, A.A. Dorofeev, K.A. Ivanov, V.M. Minnebaev,* *An.V. Redka, A.V. Tsarev* Investigation of the effect of the Schottky FET active region design on its thermal behavior Download this article as .pdf	25-31
*E.M. Savchenko, P.V. Taran, A.V. Telets, S.A. Fursov, A.N. Shchepanov* The main approaches to the development of analog and microwave electronic components models for use in CAD Download this article as .pdf	32-43
*S.M. Romanovskiy* Analysis of negative side-effects arising from the installation of three power LDMOS transistor dies into one case Download this article as .pdf	44-52
*A.A. Pugachev, A.A. Kononov* The method for technolocal-device modeling of X-ray sensitive charce coupled device VLSI Download this article as .pdf	53-59
*A.A. Dorofeev* Calculation of the mixing resonant-tunneling diode cutoff frequency for the equivalent circuit with quantum inductance Download this article as .pdf	60-64
*V.M. Minnebaev, Al.V. Redka, A.V. Ushakov, M.V. Ushakov, A.V. Tsarev* X-band Microwave Waveguide Power Combiner Download this article as .pdf	65-68
*I.M. Abolduev, A.V. Belolipetskiy, V.M. Minnebaev, Al.V. Redka, I.A. Khabarov, A.V. Tsarev* Linear Microstrip Radiators for AESA Radar Applications Download this article as .pdf	69-73
*F.I. Shamhalov, E.V. Shirkina, M.N. Kiselev* Analysis of the Risks Arising due to Errors in Patent and Legal Support for Research and Development Download this article as .pdf	74-81

№ 2 (249)

Read more about issue 2 (249)

*E.G. Polyakova* Device structures based on β-FeSi₂ Download this article as .pdf	4-18
*M.A. Zinoviev, M.V. Mezhennyi, A.S. Drenin, E.S. Rogovskiy, O.V. Khoruzhenko, O.R. Abdullaev* Simulation of the photosensitive element based on xBn-structure of InGaAs/AlInAs/InGaAs Download this article as .pdf	19-28
*I.E. Ioshin, Yu.A. Kontsevoy* Influence of ultraviolet in vitro radiation on artificial eye lenses and the importance of sunglasses quality control Download this article as .pdf	29-33
*E.M. Savchenko, S.V. Kataev, V.A. Sidorov, A.G. Chuprunov* Thick-film metallization technology for the AlN-ceramics using compounds based on refractory metals Download this article as .pdf	34-39
*M. N. Kondakov, S. V. Chernykh, A. V. Chernykh, D. A. Podgorny, N. B. Gladysheva,* *A. A. Dorofeev, S. I. Didenko, D. B. Kaprov, T. A. Zhukova* Effect of annealing conditions on electrical properties, surface morphology and microstructure of Mo/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructures Download this article as .pdf	40-47
*A.A. Zolotarev* Application of AlSiC metal-matrix composite to produce GaN microwave transistor cases Download this article as .pdf	48-52
*M.N. Kiselev, N.S. Nikolaenkov* Analysis of the practice of legal protection of innovation results, generated in microelectronics R&D Download this article as .pdf	53-59

№ 1 (248)

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*V.A. Bespalov, N.A. Dyuzhev, B.K. Medvedev* Silicon carbide power electronic devices technology (overview) Download this article as .pdf	4-18
*E.N. Vologdin* Physical basis for prediction of silicon semiconductor devices resistance to the pulsed neutron radiation Download this article as .pdf	19-27
*G. V. Chukov, V. V. Elesin, G. N. Nazarova, N. A. Usachev, D. V. Boychenko,* *A. Yu. Nikiforov, A. V. Telets* Radiation hardness estimation and assurance of solid-state microwave electronics by the choice of the criteria parameters Download this article as .pdf	28-34
*E. T. Avrasin, D. O. Vanichkin, E. N. Vologdin, I. Ya. Gantman, V. F. Sinkevich* Analysis of methodological basis for pulsed voltage-withstand testing of semiconductor electronic devices in accordance with regulatory documentation Download this article as .pdf	35-48
*I.A. Kharitonov* Simulation of radiation-induced drain leakage currents in SOI MOSFETs at high temperatures with SPICE model Download this article as .pdf	49-56
*V.E. Akinin, O.V. Borisov, Yu.V. Kolkovskiy, V.M. Minnebaev, Al.V. Redka, An.V. Redka, A.V. Ushakov, A.V. Tsarev* 8-th channel X-band transceiver module with digital signal pre-processing Download this article as .pdf	57-67
*D.V. Gasilin* Improving of the frequency-selective broadband receiver structure Download this article as .pdf	68-71
*V.V. Vasilevsky, A.N. Mikhоlyonok, A.S. Zhebel* High-performance algorithm for preliminary digital processing of video information for aerospace monitoring of dynamic objects Download this article as .pdf	72-77

Year 2017

№ 4 (247)

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*Kleymenov V. V., Sakhno V. I., Sakhno D. I.* Modeling of synthetic aperture radar with composite pseudo-noise waveform formed on the basis of F-codes Download this article as .pdf	4-12
*Krymko M. M., Korneev S. V., Romanovskiy S. M.* Simulation of intrinsic matching networks` losses of microwave power transistor and estimation of their influence on transistor performance Download this article as .pdf	13-20
*Minnebaev S. V., Filatov A. L., Krasnov V. V.* Low-noise Al_xGa_1-xN/GaN composite-channel HEMT Download this article as .pdf	21-27
*Sakhno D. I.* The ambiguity function of synthetic aperture radar quasicontinuous pseudo-noise waveform Download this article as .pdf	28-36
*Kobeleva S. P., Perevezentsev A. V., Fomin V. M., Frenkel M. M.* Calculation of active electronically scanned antenna array beam pattern Download this article as .pdf	37-41
*Zhebel A. S., Kostyukov E. V., Pugachev A. A., Sokolov S. V.* Optimization of vertical anti-blooming device performance in photosensitive charge-coupled device Download this article as .pdf	42-46
*Sakhno V. I.* Ambiguity function of the composite pseudo-noise waveform formed on the basis of F-codes Download this article as .pdf	47-52
*Zinoviev M. A., Drenin A. S., Rogovskiy E. S., Abdullaev O. R., Khoruzhenko O. V.* Physico-mathematical modeling of the operation of an avalanche photodiode based on the A₃B₅ heterostructure Download this article as .pdf	53-60
*Ivashko A. I., Krymko M. M.* Metal-ceramic case for power semiconductor modules Download this article as .pdf	61-67

№ 3 (246)

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*Gruzdov V. V., Kolkovsky Yu. V.* Radiation-hardened gallium nitride microwave technology Download this article as .pdf	4-9
*Kontsevoy Yu. A., Shamkhalov F. I.* Material and structural inspection in the design of GaN microwave transistors Download this article as .pdf	10-14
*Belolipetskiy A. V., Borisov O. V., Kolkovsky Yu. V., Legai G. V., Minnebaev V. M., Redka Al. V., Redka An. V.* Electronic antenna unit for X-band space application AESA Download this article as .pdf	15-25
*Savchenko E. M., Budyakov P. S., Surkov N. S.* Gain-block based ultra-high-speed ADC drivers Download this article as .pdf	26-33
*Benuni I. S., Valamin E. A., Minnebaev V. M., Evgrafov A. Yu., Minnebaev S. V., Zubkov A. M.* Extraction of GaN transistor model for large signal operation Download this article as .pdf	34-43
*Benuni I. S., Dyakonitsa O. Yu., Klimov A. O., Pavlyuk-Moroz N. A., Redka Al. V.* Features of microwave GaN power amplifier dies solder bonding Download this article as .pdf	44-51
*Kiselev M. N.* Intellectual property management in the process of high-tech microwave electronic products creation Download this article as .pdf	52-58

№ 2 (245)

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*Gruzdov V. V., Enisherlova K. L., Kolkovskiy Yu. V.* Comparative analysis of AlGaN/GaN microwave transistors Download this article as .pdf	6-13
*Korneev V. E., Pashkov M. V., Shamkhalov F. I.* Features of monitoring GAN microwave transistor's ohmic contact creation technology Download this article as .pdf	14-17
*Kuliev M. V.* Overview of today's GaN transistors and development trends Download this article as .pdf	18-28
*Lozovsky V. N., Lomov A. A., Seredin B. M.,Simakin S. G.,Zaichenko A. N., Seredina M. B.* Thermomigration p-channels: real structure and electrical properties Download this article as .pdf	29-38
*Zolotarev A. A., Ivanov K. A.* Analysis of deformation of metal-matrix composite AlSiC under self-heating microwave power FET with Schottky barrier Download this article as .pdf	39-47
*Alipa D. G., Dyakonitsa O. Yu., Klimov A. O.* Investigation of the defects in ultrasonic bonding of microwave transistors Download this article as .pdf	48-56

№ 1 (244)

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*Maksimov A. N., Krasnov A. A., Ivashko A. I., Ledovskikh A. P., Krymko M. M., Korneev S. V., Sinkevich V. F.* The impact of the second barrier layer AlGaN on the parameters of the power HEMT Download this article as .pdf	4-12
*Perov G. V., Sinitsa A. V.* Parameters of extreme electrical stress in ultrathin films of silicon oxide with inomogeneous blocking edge Download this article as .pdf	14-21
*Knyazev I. V., Palagin M. S., Kostsov E. G., Gluhov A. V.* Design of fast optical switch with dynamically tunable wavelength Download this article as .pdf	23-28
*Perov G. V.* Determination of the critical configurations of an oxidized polysilicon gate to reduce the probability of failures in stored nonvolatile memory arrays Download this article as .pdf	30-35
*Manin A. V., Yudin A. V., Eliseichev E. A.* Block-modular switching power supply for high-temperature heater with parasitic inductance control Download this article as .pdf	37-44
*Evdokimova N. L., Dolgov V. V., Motorin A. Yu.* Thermal conductivity measurements of materials used in manufacturing of semiconductor devices Download this article as .pdf	45-52

Year 2016

№ 4 (243)

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*Anosov V. S., Gomzikov D. V., Pashkov M. V., Seidman L. A., Tychkin R. I., Fomin V. M.* Research of the installation of the power transistors silicon chips in gold-plated and nickel-plated housings with a ПСр 2.5 alloy Download this article as .pdf	4-10
*Palagin M. S., Knyazev I. V., Berkin A. B.* Modeling and analysis of membranes for micropumps Download this article as .pdf	12-18
*Pechenkin A. A., Savchenkov D. V., Kessarinskiy L. N., Tararaksin A. S., Bobrovskiy D. V., Sorokoumov E. S.* Localizing the microchip die components, which determine the level of resistance to the pulsed ionizing radiation, using pulsed laser beam Download this article as .pdf	20-27
*Potapov A. L., Yashanin I. B., Ulanova A. V.* Investigation of the influence of ram memory cell design on the degree of information safety Download this article as .pdf	29-35
*Shvetsov-Shilovskiy I. I.* Total ionizing dose radiation effects in the elements of 0.24 um CMOS SOI test structures Download this article as .pdf	37-45
*Usov S. O., Sakharov A.V., Tsatsulnikov A. F., Zavarin E. E., Nikolaev A. E., Yagovkina M. A., Zemlyakov V. E., Egorkin V. I., Ustinov V. M.* High electron mobility transistors based on InAlN/AlN/GaN heterostructures Download this article as .pdf	47-57

№ 3 (242)

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*Anosov V. S., Gomzikov D. V., Pashkov M. V., Seidman L. A., Tychkin R. I., Fomin V. M.* Investigation of silicon die braze bonding method using Au-Si eutectic alloy Download this article as .pdf	4-12
*Ivashko A. I., Krymko M. M.* The influence of solder materials on the parameters of power semiconductor devices Download this article as .pdf	14-20
*Gasilin D. V., Kotelnikov V. G.* Algorithm for frequency-selective receiver with ultra-wideband digital signal processing Download this article as .pdf	22-26
*Goraychev V. G., Chernokozhin V. V.* The influence of properties of multilayered dielectric layers on the radiation sensitivity of MONOS-structures Download this article as .pdf	28-40
*Didyk P. I., Basovskiy A. A., Zhukov A. A., Kharitonov V. A.* Electrical parameters of planar diodes in wide temperature range Download this article as .pdf	42-48

№ 2 (241)

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*Kolpakov K. N.* Method of calculating the thermal regime of solid-state microwave modules during screening tests Download this article as .pdf	4-8
*Metelkin I. O., Elesin V. V.* Modeling of transient radiation effects in GaAs field effect transistorse Download this article as .pdf	10-19
*Krasnov A. A., Troshchiev S. Yu.* Synthetic diamond betavoltaic element design and electrical evaluation Download this article as .pdf	21-31
*Babkin S. I., Volkov S. I., Esenkin K. S., Novoselov A. S., Stolyarov A. A.* Multilevel metallization for high temperature microelectronics Download this article as .pdf	33-44
*Sogoyan A. V., Chumakov A. I.* Evaluation of ionization response of semiconductor elements in the diffusion approximation under the influence of heavy charged particles Download this article as .pdf	46-57

№ 1 (240)

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*Prilutskiy A. A.* Excitation of electrically large APAA by the wideband chirp signal Download this article as .pdf	4-18
*Ivanov K. A.* Single-threaded realization of the multi-grid method with a magic interpolation Download this article as .pdf	19-36
*Enisherlova K. L., Kolkovsky Yu. V., Kontsevoy Yu. A., Rusak T. F., Gusev M. E.* Influence of ultraviolet illumination on the electrical and optical properties of the AlGaN/GaN heterostructures Download this article as .pdf	37-46
*Aronov V. L., Kolchin G. S., Korenkov I. V., Yakovlev I. P.* Problems of nonlinear microwave amplifier path adjustment in the frequency band during serial production of transmitting modules Download this article as .pdf	47-52
*Kataev S. V., Batrov A. E.* Manufacture of power microwave transistor package’ components, power electronics devices and engineering equipment using multifunctional complex LRS-300A Download this article as .pdf	53-57

Year 2015

№ 1 (235)

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*Gusev M. E.* Fast method calibrated electronic shutter for CCD Download this article as .pdf	8-12
*Ainbund* М*. R., Alymov O. V., Andreeva E. B., Vasiliev I. S., Levina E. E., Pashuk A. V., Plakhov S. A., Svischev I. A., Chernova O. V.* Hybrid low light level TV device for UV spectral range Download this article as .pdf	13-16
*Abolduev I. M., Garber G. Z., Zubkov A. M., Ivanov K.* А*., Kolkovsky Yu. V., Krasilnikov V. D., Minnebaev V. M.* The microwave parameters temperature dependence of the GaN and diamond power FETs Download this article as .pdf	18-25
*Evdokimova N. L., Ejov V. S., Ivanov K. A.* Analytical thermal structural function. Numerical modeling Download this article as .pdf	27-35
*Evdokimova N. L., Ejov V. S.* The determination of emissivity and the self heating temperature of semiconductor devices in one measuring process Download this article as .pdf	37-40
*Sinkevich V. F., Telets A. V.* The dependence of the number of failures from solid-state microwave modules operating time Download this article as .pdf	41-44
*Shumkov I. E., Krymko M. M., Korneev S. V., Rostanin A. N., Khristyanovskiy A. G.* BICMOS circuit driver’s features for intelligent power modules multiphase invertors Download this article as .pdf	45-53
*Babkin S. I., Novoselov A. S., Presnyakov M. Y.* The programming element, integrated into the multilevel metallization CMOS SOI Download this article as .pdf	55-61
*Kataev S. V., Sidorov V. A., Evstigneev D. A.* The heat-removing bases of AlN ceramics with metallized holes in the base circuits for L-band power transistors Download this article as .pdf	62-67

Year 2014

№ 3 (234)

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*Abolduev I. M., Veits V. V., Evgrafov A. Y., Minnebaev V. M., Soltakhanov S. U., Chernykh A. V.* Investigation of GaAs diodes with barrier Shottky for solid state noise source of X band Download this article as .pdf	4-8
*Kargin N. I., Volosov A. V., Minnebaev S. V., Blinov P. I.* Design and technologies of modern micro-chip modules fabrication and trends for their development Download this article as .pdf	10-14
*Garber G. Z.* Mathematical modeling as a means to estimate the accuracy of the microwave FET equivalent circuit Download this article as .pdf	15-25
*Minnebaev V. M., Krasnov V. V.* LNA for multichannel receiver 8-mm range input krioblok for spectral observations Download this article as .pdf	27-33
*Chernykh M. I., Veligura G. A., Buslov V. A., Kozhevnikov V. A., Tsotsorin A. N.* Thermal stability of multilayer metallization systems for semiconductor device application Download this article as .pdf	35-41
*Demenkova T. A., Nikolaev S. A., Pevtsov E. F.* Architecture of IP blocks for FFT calculation Download this article as .pdf	42-49
*Starykh* А. А*., Kovalev* А*. V.* The development optimization of asynchronous adders Download this article as .pdf	51-55
*Baturin A. V., Loscot A. I.* Testing electronic products under the scheme stepwise loading. Use Bayesian estimates of parameters of realibility Download this article as .pdf	56-61
*Komkov O. S., Firsov D. D., Kovalishina E. A., Petrov A. S.* Optical absorption in epitaxial structures based on InAs at temperatures of 80 K and 300 K Download this article as .pdf	62-64

№ 2 (233)

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*Borisov O. V., Ivanov K. A., Zubkov A. M., Minnebaev V. M., Redka Al. V.* X-band 70-W GaN broadband power amplifier Download this article as .pdf	4-9
*Kostyukov E. V., Maklakov A. M., Pugachev A. A., Pospelova M. A., Sokolov S. V., Trunov S. V.* The CCD image sensor with vertical over flow drain Download this article as .pdf	10-19
*KolkovskyYu. V., Minnebaev V. M.* Application of GaN devices in space environment Download this article as .pdf	20-26
*Vologdin E. N., Dyukanov P. A., Sinkevich V. F., Smirnov D. S., Surkov G. P.* Accounting for the effects of neutron irradiation to bipolar ICS OS when circuit simulation Download this article as .pdf	27-33
*Klyuev A. V., Yakimov A. V., Ryzhkin M. I., Luchnikov A. P., Bolkhovskaya O. V.* Investigation of 1/f noise in quantum-dimensional heteronanostructures based on GaAs Download this article as .pdf	34-41
*Lebedev A. A., Komleva V. A., Yakovleva N. M.* Architectural and circuit design techniques improving radiation-sensitive characteristics of the LM124 class operational amplifier used in space equipment Download this article as .pdf	42-46
*Babkin S. I., Novoselov A. S.* The thin film structure for programming element, integrated into the multilevel metallization CMOS VLSI Download this article as .pdf	47-50
*Prokopenko N. N., Dvornikov O. V., Budyakov P. S.* Properties, parameters and connection circuits of differential difference amplifiers with high impedance node Download this article as .pdf	51-62
*Luchnikov* P. A., *Rogachev* A. A., *Yarmolenko* M. A., *Luchnikov* A. P. Segregation of silver nanoparticles in layered metal-polymer heterostructures after heat treatment Download this article as .pdf	63-72

№ 1 (232)

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*Petrosyants K. O., Samburskiy L. M., Haritonov I. A.* Influence of various types radiation on characteristics of the silicon-germanium heterojunction transistors Download this article as .pdf	3-18
*Budyakov A. S., Ghuravleva L. V., Vlasov A. I., Averiyanihin A. E.* Design of Marchund baluns for millimeter wave monolithic integrated circuits based on silicon technologies Download this article as .pdf	20-28
*Zubkov A. M.* Study of the possibility of the cubic Curtis model using for the calculation of power microwave AlGaN HFETs amplifiers Download this article as .pdf	29-34
*Baturin A. V., Grigorieva T. A., Loscot A. I., Malinin V. G.* Use of Bayes theorem for assessment of the electronic component base reliability Download this article as .pdf	35-38
*Ivanov K. A.* Verification code for calculation of temperature field Download this article as .pdf	40-43
*Gladysheva* N. B., *Zavadsky* Yu. I., *Kolkovsky* Yu. V., *Kontsevoy* Yu. A. Ellipsometric control of metallization process in microwave transistor technology Download this article as .pdf	44-50
*Vasilev V. Yu.* The low-temperature gas-phase deposition at sub-atmospheric pressure of silicon dioxide layers by means of tetraetoksisilan oxidation by ozone-oxygen mixture for application in submicron integrated circuits. Part 2. Investigation of layer growth in condition of continuous lapping reagents Download this article as .pdf	52-61
*Aleksandrov O. V., Kovtun E. S., Romanov N. M., Semenov A. E.* Investigation of corrosion resistance of the IC aluminum metallization Download this article as .pdf	63-68
*Lisyanskiy A. N., Kozhevnikov V. A.* Manufacturing technology of Shottky gate transistor with a vertical structure Download this article as .pdf	69-74
*Kargin N. I., Kuznetsov A. L., Seidman L. A., Chashkin N. A., Shostachenko S. A.* Formation of ohmic contacts in the high electron mobility transistor with metamorphic heterojunction based on gallium arsenide Download this article as .pdf	75-84

Year 2013

№ 2 (231)

Read more about issue 2 (231)

*Orlikovsky* A. A., *Vyurkov* V. V., *Rudenko* K. V., *Semenishin* I. A., *Svintsov* D. A., *Miakonkikh* A. V., *Filippov* S. N., *Rogozhin* A. E. Evolution of MIS-nanotransistor Download this article as .pdf	3-25
*Aronov V. L., Romanovsky S. M.* Model investigation of effects of the multichanel microwave LDMOS transistor work in frequency band Download this article as .pdf	26-34
*Enisherlova K. L, Lutzau A. V., Seidman L. A., Temper E. M., Konovalov A. M.* Technological features of the ohmic contact formation in Ti-Al-Ni-Au–n-AlGaN-GaN system Download this article as .pdf	35-45
*Fedorets V. N., Kolkovsky Yu. V.* Investigations in area of the surface acoustic wave in SRI «Pulsar» Download this article as .pdf	46-52
*Aronov V. L., Evstigneev A. S., Evstigneev A. A.* Thematic transformation of SRI «Pulsar» for past 60 years Download this article as .pdf	53-58
*Podgorny Y. V., Vishnevskiy A. S., Vorotilov K. A., Sigov A. S.* Simulation of current-voltage characteristics of thin-film ferroelectric structures with differential negative conductivity Download this article as .pdf	59-68
*Krymko M. M., Korneev S. V., Kolchin G. S., Leonidov V. V., Shumkov I. E.* Formation of time-current characteristic of the protection and commutation all-solid state apparatus with microintegrated system Download this article as .pdf	70-74
*Seregin D. S., Vishnevskiy A. S.,Vorotilov K. A., Lantsev A. N., Valeev A. S.* Chemical vapor deposition of low-k insulating layers Download this article as .pdf	75-87
*Gruzdov* V. V., *Kolkovsky* Yu. V., *Minnebaev* V. M. Microwave electronics based on gallium nitride – the main direction of the radioelectronic systems creation Download this article as .pdf	88-101
*Nesterov S. A., Borodin D. V., Pugachev A. A.* Development of the visible band CMOS photodetector on base of home technology (brief communication) Download this article as .pdf	102-104

№ 1 (230)

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*Zyablyuk K. N., Kontsevoy Yu. A., Mityagin A. Yu., Talipov N. H., Chucheva G. V.* The adamantine field transistor parameters required for work in amplifiers of GHz band Download this article as .pdf	3-8
*Garber G. Z., Dorofeev A. A., Zubkov A. M., Ivanov K. A., Kolkovsky Yu. V.* Design of the SHF power FET ‘s on diamond base with assistance of computer simulation Download this article as .pdf	9-16
*Babkin S. I., Trohin A. S., Novoselov A. S.* Deposition process of the amorphous silicon layers integrated in technology of the CMOS LSI multilayer metallization Download this article as .pdf	17-21
*Abolduev I. M., Veits V. V., Garber G. Z., Evgrafov A. Yu., Zubkov A. M., Minnebaev V. M., Chernyh A. V.* GaAs-diode with Schottky barrier for the solid state noise oscillator of X-band Download this article as .pdf	22-25
*Konstantinov P. B., Kostyukov E. V., Scrileov A. S., Chernokozhin V. V.* Action of the electron-sensitive CCD-matrix – element of electron-optical converter Download this article as .pdf	26-30
*Borisov* O. V., *Ivanov* K. A., *Kolkovsky* Yu. V., *Minnebaev* V. M., *Redka* A. V., *Ushakov* A. V. Phasestable 200W GaN power amplifer of X-band Download this article as .pdf	31-36
*Korneev S. V., Krymko M. M., Maksimov A. N.* Possibilities and limitations of TRENCH MOS structures Download this article as .pdf	37-41
*Baranochnikov M. L., Mordkovich V. N., Leonov A. V., Pazhin D. M., Pavlyuk M. I., Anufriev V. N., Bogatyrev V. N.,* *Dymov D. V.* Noncontact current sensor with increased reliability in extreme conditions Download this article as .pdf	42-51
*Vologdin E. N., Gantman I. Ya., Sidorov D. V.* Analyze of the radiation defects space distribution at irradiation of silicon by the radioactive source α-particles Download this article as .pdf	52-59
*Krymko* M. M., *Korneev* S. V., *Rostanin* A. N., *Hristyanovskiy* A. G., *Shumkov* I. E. Investigation of electrical parameters of the protection and switching solid-state devices Download this article as .pdf	60-68
*Evdokimova N. L., Ezhov V. S., Minin V. F.* Thermal analyze of semiconductor structures Download this article as .pdf	69-75
*Vasilev V. Yu.* The low-temperature gas-phase deposition at subatmospheric pressure of silicon dioxide layers by means of tetraetoksisilan oxidation by ozone-oxygen mixture for application in submicron integrated circuits. Part 1. Review of situation, directions and tasks of investigation Download this article as .pdf	76-87
*Kurmachev V. A.* The Schottky iridium contacts for AlGaN/GaN heterostructures (brief communication) Download this article as .pdf	88-89

1. A.V. Tsarev

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